SUD40N06-25L vishay siliconix document number: 70264 s-57741erev. g, 31-mar-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 60-v (d-s), 175 c mosfet, logic level v ds (v) r ds(on) ( ) i d (a) a 60 0.022 @ v gs = 10 v 30 60 0.025 @ v gs = 4.5 v 30 to-252 s gd top view drain connected to tab order number: SUD40N06-25L d g s n-channel mosfet
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 30 a continuous drain current (t j = 175 c) b t c = 100 c i d 30 a pulsed drain current i dm 100 a continuous source current (diode conduction) i s 34 avalanche current i ar 34 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 58 mj maximum power dissipation t c = 25 c p d 75 w maximum power dissipation t a = 25 c p d 1.4 b , 2.5 c w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit maximum junction - to - ambient free air, fr4 board mount r thja 60 c/w m ax i mum j unc ti on- t o- a m bi en t free air, vertical mount r thja 110 c/w maximum junction-to-case r thjc 2.0 notes: a. package limited. b. free air, vertical mount. c. surface mounted on 1o x 1o fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm free datasheet http:///
SUD40N06-25L vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70264 s-57741erev. g, 31-mar-98
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